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 NTA7002N Small Signal MOSFET
30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75
Features http://onsemi.com
RDS(on) Typ @ VGS 1.4 W @ 4.5 V 2.3 W @ 2.5 V 3 ID MAX (Note 1) 154 mA
* * * *
Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available
V(BR)DSS 30 V
Applications
* Power Management Load Switch * Level Shift * Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA's, Video Games, Hand-Held Computers, etc.
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State = 25C Steady State = 25C tP v 10 ms Symbol VDSS VGS ID PD IDM TJ, TSTG ISD TL Value 30 "10 154 300 618 -55 to 150 154 260 Unit V V mA mW Gate
1
2 N-Channel
PIN CONNECTIONS
SC-75 (3-Leads) 1
3 mA C mA C
3
Drain
Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
Source
2 (Top View)
MARKING DIAGRAM
3
2
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Symbol RqJA Max 416 Unit C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
T6 MG SC-75 / SOT-416 G CASE 463 1 2 STYLE 5 T6 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
1
ORDERING INFORMATION
Device NTA7002NT1 NTA7002NT1G Package SC-75 SC-75 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
July, 2005 - Rev. 1
Publication Order Number: NTA7002N/D
NTA7002N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Leakage Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(on) VDS = VGS, ID = 100 mA VGS = 4.5 V, ID = 154 mA VGS = 2.5 V, ID = 154 mA Forward Transconductance CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Diode Characteristics Forward Diode Voltage VSD VGS = 0 V, IS = 0.154 mA 0.77 0.9 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 5.0 V, ID = 75 mA, RG = 10 W 13 15 98 60 ns ns CISS COSS CRSS VDS = 5.0 V, f = 1 MHz, VGS = 0 V 11.5 10 3.5 pF gFS VDS = 3 V, ID = 154 mA 0.5 1.0 1.4 2.3 80 1.5 7.0 7.5 V W mS V(BR)DSS IDSS IDSS IGSS IGSS IGSS VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 30 V VGS = 0 V, VDS = 20 V, T = 85 C VDS = 0 V, VGS = 10 V VDS = 0 V, VGS = 5 V VDS = 0 V, VGS = 5 V T = 85 C 30 1.0 1.0 25 1.0 1.0 V mA mA mA mA mA Symbol Test Condition Min Typ Max Unit
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
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2
NTA7002N
TYPICAL PERFORMANCE CURVES
0.2 ID, DRAIN CURRENT (AMPS) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.4 0.8 1.2 1.6 1.4 V 1.2 V 2.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 10 V 5V 2.8 V 2.4 V TJ = 25C ID, DRAIN CURRENT (AMPS) 0.2 VDS = 5 V 0.16
2V
0.12
0.08 TJ = 125C 0.04 0 0.6 TJ = 25C TJ = -55C 0.8 1 1.2 1.4 1.6 1.8 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2.5 VGS = 4.5 V 2 TJ = 125C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2.5
Figure 2. Transfer Characteristics
TJ = 25C 2 VGS = 2.5 V
1.5 TJ = 25C 1 TJ = -55C 0.5 0 0.1 0.15 0.05 ID, DRAIN CURRENT (AMPS) 0.2
1.5 VGS = 4.5 V 1
0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 0.2
Figure 3. On-Resistance vs. Drain Current and Temperature
2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 1 -25 0 25 50 75 100 125 150 ID = 0.15 A VGS = 4.5 V IDSS, LEAKAGE (nA) 100 1000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150C
10 TJ = 125C
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
http://onsemi.com
3
NTA7002N
TYPICAL PERFORMANCE CURVES
25 Ciss Crss t, TIME (ns) 100 TJ = 25C 1000 VDD = 5.0 V ID = 75 mA VGS = 4.5 V td(off) tf tr td(on)
C, CAPACITANCE (pF)
20
15
10 Ciss 5 0 10 VDS = 0 V 5 VGS 0 VDS VGS = 0 V 5 10 15 Coss Crss 20
10
1
1
10 RG, GATE RESISTANCE (OHMS)
100
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation vs. Gate Resistance
0.16 IS, SOURCE CURRENT (AMPS) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.5 0.65 0.55 0.6 0.7 0.75 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 0.8 VGS = 0 V TJ = 25C
Figure 9. Diode Forward Voltage vs. Current
http://onsemi.com
4
NTA7002N
PACKAGE DIMENSIONS
SC-75 / SOT-416 CASE 463-01 ISSUE F
-E-
2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027
e
1
-D-
b 3 PL 0.20 (0.008)
M
D
HE
0.20 (0.008) E
DIM A A1 b C D E e L HE
MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065
C
A L A1
STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.356 0.014
1.803 0.071
0.787 0.031
0.508 0.020
1.000 0.039
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
NTA7002N
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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6
NTA7002N/D


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